ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,489, issued on May 12, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Transistor device" was invented by Michael Hutzler (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a transistor device includes: a support layer having a first major surface and a second major surface opposing the first major surface; a source contact arranged on the first major surface of the support layer; a drain contact arranged on the second major surface of the support layer; and a gate electrode arranged in a first trench formed in the first major surface of the support layer. The first trench has a base and a side wa...