US Patent Issued to Infineon Technologies Austria on Feb. 10 for "Trench junction field effect transistor having a mesa region" (Austrian Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,387, issued on Feb. 10, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Trench junction field effect transistor having a mesa region" was invented by Hans Weber (Villach, Austria), David Kammerlander (Villach, Austria) and Andreas Riegler (Wernberg, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench junction field effect transistor (trench JFET) includes a mesa region confined by first and second trenches along a first lateral direction. The first and second trenches extend into a semiconductor body from a first surface of the semiconductor body. A mesa channel region of a first conductivity type is confined, along...