ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,485, issued on Dec. 2, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Superjunction transistor device" was invented by Hans Weber (Bayerisch Gmain, Germany), Bjorn Fischer (Munich), Franz Hirler (Isen, Germany), Matteo-Alessandro Kutschak (Ludmannsdorf, Austria) and Andreas Riegler (Lichtpold, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device is disclosed. The transistor device includes: a semiconductor body (100); a drift region (11) in the semiconductor body (100); a plurality of transistor cells (10); and a gate node (G) and a source node (S), wherein each of the plurality of transistor cells (10) in...