US Patent Issued to Infineon Technologies Austria on Aug. 25 for "Semiconductor die and method of manufacturing the same" (Austrian, German Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,798, issued on Aug. 25, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor die and method of manufacturing the same" was invented by Alessandro Ferrara (Villach, Austria), Daniel Regenfeldner (Sauerlach, Germany) and Thomas Ralf Siemieniec (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor die includes a semiconductor device and an edge termination structure laterally between the semiconductor device and a lateral edge of the die. The edge termination structure includes a first inner shield electrode region with a shield electrode in a trench extending into a semiconductor body, an outer...