ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,245, issued on Aug. 25, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Power semiconductor device" was invented by Ralf Otremba (Kaufbeuren, Germany) and Christian Fachmann (Villach, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a package and a plurality of power semiconductor chips, each power semiconductor chip including a semiconductor body, a first load terminal, a second load terminal and a control terminal. The device also includes a plurality of outside terminals. The outside terminals include: one or more first outside terminals electrically connected with the first load ...