US Patent Issued to Infineon Technologies Austria on Aug. 11 for "Semiconductor device having an isolation region with a recess and method of manufacturing the semiconductor device" (German Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,979, issued on Aug. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device having an isolation region with a recess and method of manufacturing the semiconductor device" was invented by Norbert Labrenz (Dresden, Germany) and Alim Karmous (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, an isolation region that is formed at a main surface of the substrate, and a recess in the isolation region. The semiconductor device further includes an active or passive device that is formed in the recess. The active or passive ...