US Patent Issued to Industrial Technology Research Institute on April 21 for "Semiconductor structure including insulating vacancy for improving operation performance and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,808, issued on April 21, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).

"Semiconductor structure including insulating vacancy for improving operation performance and method of fabricating the same" was invented by Shang-Chun Chen (Hsinchu City, Taiwan), Po-Chun Yeh (Taichung City, Taiwan) and Pei-Jer Tzeng (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the ...