US Patent Issued to Imec vzw on July 14 for "Method for forming a FET device" (Belgian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,795, issued on July 14, was assigned to Imec vzw (Leuven, Belgium).

"Method for forming a FET device" was invented by Boon Teik Chan (Wilsele, Belgium), Naoto Horiguchi (Leuven, Belgium) and Julien Ryckaert (Schaerbeek, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a FET device is provided. The method includes: forming a fin structure comprising a layer stack comprising channel layers and non-channel layers alternating the channel layers; etching each of first and second fin parts from each of first and second opposite sides of the fin structure such that a set of source cavities extending through the first fin part is ...