ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,378, issued on Feb. 17, was assigned to Imec vzw (Leuven, Belgium).
"Complementary field-effect transistor device" was invented by Bilal Chehab (Leuven, Belgium), Pieter Schuddinck (Nieuwerkerken, Belgium), Julien Ryckaert (Schaerbeek, Belgium) and Pieter Weckx (Bunsbeek, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Example embodiments relate to complementary field-effect transistor (CFET) devices. An example CFET device includes a bottom FET device. The bottom FET device includes a bottom channel nanostructure having a first side surface oriented in a first direction. The bottom FET device also includes a second side surface oriented in a...