US Patent Issued to II-VI DELAWARE on March 24 for "Systems and methods for aluminum ion beam generation source technology" (Delaware Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,756, issued on March 24, was assigned to II-VI DELAWARE INC. (Wilmington, Del.).

"Systems and methods for aluminum ion beam generation source technology" was invented by Ahmet Hassan (Wilmington, Del.), Raymond Pong (Wilmington, Del.), Jeremy Turcaud (Wilmington, Del.) and John Schuur (Wilmington, Del.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yiel...