US Patent Issued to II-VI ADVANCED MATERIALS on May 5 for "Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof" (New Jersey, Connecticut Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,171, issued on May 5, was assigned to II-VI ADVANCED MATERIALS LLC (Pine Brook, N.J.).

"Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof" was invented by Xueping Xu (Wesport, Conn.), Iiya Zwieback (Township Of Washington, N.J.), Avinash Gupta (Basking Ridge, N.J.) and Varatharajan Rengarajan (Flanders, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that ...