US Patent Issued to IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK on Sept. 1 for "Diode with light-sensitive intrinsic region" (German Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,260, issued on Sept. 1, was assigned to IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK (Frankfurt, Germany).

"Diode with light-sensitive intrinsic region" was invented by Stefan Lischke (Frankfurt, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region...