US Patent Issued to IDEAL POWER on June 23 for "Methods and systems of operating a double-sided double-base bipolar junction transistor" (Texas Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,593, issued on June 23, was assigned to IDEAL POWER INC. (Austin, Texas).

"Methods and systems of operating a double-sided double-base bipolar junction transistor" was invented by Mudit Khanna (Austin, Texas), Jiankang Bu (Austin, Texas) and Ruiyang Yu (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Operating a double-sided double-base bipolar junction transistor. One example is a method of operating a switch assembly, the method comprising: blocking current flow from an upper terminal of the switch assembly to a lower terminal by a transistor; and then responsive to assertion of a conduction signal, conducting a first load current fro...