US Patent Issued to HYUNDAI MOBIS on July 14 for "Power semiconductor device and method for manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,845, issued on July 14, was assigned to HYUNDAI MOBIS Co. LTD. (Seoul, South Korea).

"Power semiconductor device and method for manufacturing the same" was invented by Ju Hwan Lee (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor layer formed of silicon carbide (SiC), a trench formed by etching the semiconductor layer, a gate formed in a manner that a partial region of the gate is buried in the trench and another partial region of the gate extends over the semiconductor layer, a shield region formed to surround a lower region of the trench, a well region disposed in the semic...