US Patent Issued to HUNAN SAN'AN SEMICONDUCTOR on Nov. 3 for "Semiconductor device and method of making the same and seal ring structure" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,785, issued on Nov. 3, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Changsha, China).

"Semiconductor device and method of making the same and seal ring structure" was invented by Kechuang Lin (Changsha, China), Ning Xu (Changsha, China), Cheng Liu (Changsha, China) and Nien-Tze Yeh (Changsha, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and a semiconductor structure that is located on the substrate and that includes a device portion including a semiconductor element, and a seal ring portion. The semiconductor element includes a first electrode and a second electrode. The seal ring portion su...