ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,730,383, issued on Sept. 8, was assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hubei, China).
"Quasi-dynamic in situ ellipsometry method and system for measuring photoresist exposure process" was invented by Hao Jiang (Hubei, China), Lei Li (Hubei, China), Jiamin Liu (Hubei, China) and Shiyuan Liu (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a quasi-dynamic in situ ellipsometry method and system for measuring a photoresist exposure process. The method includes: obtaining a measured Muller matrix of a photoresist at different exposure times by a Muller matrix ellipsometer; building a forward optical mod...