US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Sept. 22 for "Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,466, issued on Sept. 22, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).

"Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device" was invented by Qianming Zhu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FinFET includes at least two fins arranged in parallel, a plurality of valid gates, and a first dummy polycrystalline silicon. The at least two fins extend in a first direction, and the plurality of valid gates and the first dummy polycrystalline silicon extend in a second direction and cover surfaces of the at least two fins. The first dummy polycrystalline silicon is located on on...