ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,825, issued on July 14, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).
"Terminal structure of power device and manufacturing method thereof, and power device" was invented by Wentao Yang (Dongguan, China), Boning Huang (Dongguan, China) and Qian Zhao (Chengdu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A terminal structure of a power device includes a substrate and a plurality of field limiting rings disposed on a first surface of the substrate. The substrate includes a drift layer and a doped layer. The doped layer is formed through diffusion inward from the first surface of the substrate. The doped layer and the drift l...