US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Dec. 30 for "Insulated gate bipolar transistor, motor control unit, and vehicle" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,925, issued on Dec. 30, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).

"Insulated gate bipolar transistor, motor control unit, and vehicle" was invented by Boning Huang (Dongguan, China), Quan Zhang (Shenzhen, China) and Wentao Yang (Dongguan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor (IGBT), a motor control unit, and a vehicle are disclosed. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer and an RC-IGBT device structure feature layer are respectively arranged on two sides of an SJ device s...