US Patent Issued to Hua Hong Semiconductor (Wuxi) on Oct. 27 for "Semiconductor structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,859, issued on Oct. 27, was assigned to Hua Hong Semiconductor (Wuxi) Ltd. (Wuxi, China).

"Semiconductor structure and method for forming the same" was invented by Tongqing Chen (Wuxi, China), Yang Yuan (Wuxi, China) and Zuohua Zhu (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The method includes: providing a substrate; forming a mask layer on the substrate, wherein the mask layer exposes a part of a surface of the substrate; etching the substrate by a plasma etching process using the mask layer as a mask to form a plurality ...