ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,463, issued on Nov. 3, was assigned to HUA HONG SEMICONDUCTOR (WUXI) Ltd. (Jiangsu, China).

"CMOS image sensor and method for forming the same" was invented by Junwen Liu (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS image sensor and a method for forming the CMOS image sensor are provided. The method includes: forming a substrate structure and a photosensitive doped layer, wherein the substrate structure includes a plurality of pixel regions which are mutually discrete, and the photosensitive doped layer is disposed in a pixel region; and forming a switching device on the photosensitive doped layer. The switching device is formed...