US Patent Issued to HORIBA on May 26 for "Semiconductor laser element, semiconductor laser device, semiconductor laser device manufacturing method, and gas analysis device" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,538, issued on May 26, was assigned to HORIBA LTD. (Japan).

"Semiconductor laser element, semiconductor laser device, semiconductor laser device manufacturing method, and gas analysis device" was invented by Makoto Matsuhama (Kyoto, Japan), Tomoji Terakado (Kyoto, Japan) and Yusuke Awane (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention enables single mode light to be stably output while also enabling the intensity thereof to be increased, and is a distributed feedback type of semiconductor laser element in which a diffraction grating is formed on a waveguide. The waveguide includes a diffraction grating portion where...