US Patent Issued to Hon Young Semiconductor on Oct. 27 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,675, issued on Oct. 27, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Liang-Ming Liu (Hsinchu City, Taiwan) and Yan-Ru Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a gate structure, a first oxide layer, and a second oxide layer. The substrate has a trench. An inclined surface and a bottom surface of the trench have an obtuse angle therebetween. The gate structure is located in the trench. A width of a bottom surface of the gate structure is less than a width of a top surface o...