ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,318, issued on Feb. 17, was assigned to Hon Young Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor structure and method of forming thereof" was invented by Yu-Tsu Lee (Hsinchu, Taiwan), Yan-Ru Chen (Hsinchu, Taiwan), Liang-Ming Liu (Hsinchu, Taiwan) and Kuang-Hao Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxi...