US Patent Issued to HITACHI HIGH-TECH on Sept. 8 for "Plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,768, issued on Sept. 8, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).

"Plasma processing apparatus" was invented by Yuki Tanaka (Tokyo), Takamasa Ichino (Tokyo), Shintaro Nakatani (Tokyo) and Tomoaki Hyodo (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus including a processing chamber and a cylindrical sample stage disposed within the processing chamber and having an upper surface on which the wafer is placed, the sample stage including a disc-like substrate; a dielectric film covering an upper surface of the substrate; and a heater layer disposed inside the dielectric film. The heater layer includes a plurality...