US Patent Issued to Hitachi High-Tech on March 31 for "Plasma processing apparatus and manufacturing method of wafer stage for plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,367, issued on March 31, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing apparatus and manufacturing method of wafer stage for plasma processing apparatus" was invented by Shintaro Nakatani (Tokyo), Takamasa Ichino (Tokyo), Chia Hsing Wei (Tokyo), Yuki Tanaka (Tokyo) and Tomoaki Hyodo (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus including a metallic base material disposed inside a wafer stage and having a cylindrical shape or a circular plate shape; a dielectric film disposed on an upper surface of the base material; a film-shaped heater disposed inside the dielectric film; a refrigerant fl...