ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,881, issued on March 17, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Plasma processing method" was invented by Koichi Takasaki (Tokyo), Makoto Miura (Tokyo) and Makoto Satake (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a highly controllable plasma processing method capable of selectively removing a metal-containing layer. In the plasma processing method for plasma etching a metal-containing film formed on a formed pattern and covered with a carbon-containing film, after the carbon-containing film is removed, the metal-containing film is removed by etching with radicals generated from ...