ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,757, issued on April 21, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Film formation method and plasma processing method" was invented by Kiyohiko Satoh (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "To enable formation of a film that protects a sidewall of a pattern and is good in film quality, low in etching rate, and good in coverage of the sidewall, a film formation method includes a first step of supplying a gas into a vacuum processing chamber while generating plasma, and forming a film with the generated plasma on a surface of a substrate to be processed, a second step of removing halogen with plasma after the first step, and a t...