US Patent Issued to Hitachi High-Tech on April 14 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,255, issued on April 14, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Shintarou Nakatani (Tokyo), Kyohei Horikawa (Tokyo) and Kohei Sato (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus including a sample stage; a ring-shaped electrode, made of a conductor, which surrounds the sample stage and to which radio frequency power is supplied; a dielectric cover above the ring-shaped electrode and covering the ring-shaped electrode; a rod suspended and disposed in a through hole disposed on an outer peripheral side portion of the base material...