ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,543, issued on Sept. 8, was assigned to Hitachi Energy Switzerland AG (Baden, Switzerland).

"Power semiconductor module and manufacturing method" was invented by Harald Beyer (Lenzburg, Switzerland), Dominik Truessel (Bremgarten, Switzerland), Milad Maleki (Untersiggenthal, Switzerland), Fabian Fischer (Baden, Switzerland) and Robert Gade (Birr, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a power semiconductor module includes a main substrate, semiconductor chips mounted on the main substrate, and an auxiliary substrate also mounted on the main substrate. The power semiconductor module is capable of handling a curre...