US Patent Issued to HITACHI ENERGY on Sept. 8 for "Power semiconductor device and manufacturing method" (Swiss Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,493, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Power semiconductor device and manufacturing method" was invented by Niko Pavlicek (Zurich, Switzerland), Dominik Truessel (Bremgarten, Switzerland), Milad Maleki (Untersiggenthal, Switzerland) and Lluis Santolaria (Olten, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "In at least one embodiment, the power semiconductor device (1) comprises: at least one support (2), at least one power semiconductor chip (24) is arranged on a support top side (20), a heat sink (3) having a heat sink top side (30), the at least one support (2) is arranged on the heat sink t...