US Patent Issued to HITACHI ENERGY on March 31 for "Power field-effect transistor and manufacturing method" (Swiss Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,466, issued on March 31, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Power field-effect transistor and manufacturing method" was invented by Stephan Wirths (Thalwil, Switzerland), Lars Knoll (Hagglingen, Switzerland) and Lukas Kranz (Zurich, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, the power field-effect transistor (1) comprises: at least two source regions (21) at a top side (20) of a semiconductor body (2), a drain region (22) at a back side (23) of the semiconductor body (2), at least two charge barrier regions (24) in the semiconductor body (2) so that electrically between each one of the sour...