US Patent Issued to HITACHI ENERGY on Dec. 16 for "Power semiconductor device with an insulated trench gate electrode" (Swiss Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,666, issued on Dec. 16, was assigned to HITACHI ENERGY LTD (Zurich).

"Power semiconductor device with an insulated trench gate electrode" was invented by Marco Bellini (Zurich, Switzerland), LArs Knoll (Hagglingen, Switzerland) and Gianpaolo Romano (Baden, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device (1) comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22), a trench (4) extending from the first main surface (21) into the semiconductor body (2) in the vertical direction, and an insulated trench gate electrode (3) that is formed...