ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,947, issued on March 17, was assigned to Hitachi Astemo Ltd. (Hitachinaka, Japan).

"Power semiconductor device, power conversion device, and electric system" was invented by Takahiro Araki (Tokyo), Takeshi Tokuyama (Tokyo), Shigehisa Aoyagi (Hitachinaka, Japan) and Noriyuki Maekawa (Hitachinaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a substrate in which a positive electrode wiring connected to a first conductor on a high potential side and a negative electrode wiring connected to a fourth conductor on a low potential side are provided on one surface, and an output wiring connected to a second co...