US Patent Issued to Hitachi Astemo on June 16 for "Power semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,617, issued on June 16, was assigned to Hitachi Astemo Ltd. (Hitachinaka, Japan).

"Power semiconductor device" was invented by Hiromi Shimazu (Tokyo), Yujiro Kaneko (Hitachinaka, Japan) and Yusuke Takagi (Hitachinaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first power semiconductor element and a second power semiconductor element of a power semiconductor device are such that, when heat generated by the first power semiconductor element is larger than heat generated by the second power semiconductor element, a first distance from an end of the first power semiconductor element to an end of the conductor plate is larger than a second d...