ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,826, issued on Dec. 30, was assigned to HITACHI ASTEMO LTD. (Hitachinaka, Japan).
"Power semiconductor device" was invented by Takeshi Tokuyama (Tokyo), Takahiro Araki (Tokyo) and Shigehisa Aoyagi (Hitachinaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a circuit body having a pair of conductor parts and a power semiconductor element sandwiched between the pair of conductor parts; a substrate in which a through hole is formed; and a sealing material that seals at least a part of each of the circuit body and the substrate, in which the circuit body is inserted into the through hole and has first and se...