US Patent Issued to HIPER SEMICONDUCTOR on Feb. 3 for "High electron mobility transistor and high electron mobility transistor forming method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,363, issued on Feb. 3, was assigned to HIPER SEMICONDUCTOR INC. (George Town, Cayman Islands).

"High electron mobility transistor and high electron mobility transistor forming method" was invented by Yan Lai (Zhubei, Taiwan) and Wei-Chen Yang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor has a GaN epi-layer, a source ohmic contact, a drain ohmic contact, a gate structure, a first metal electrode contact and a first passivation layer. The source ohmic contact and the drain ohmic contact are disposed on the ep...