US Patent Issued to Hewlett Packard Enterprise Development on Sept. 29 for "Photonic devices having a field-effect transistor (FET)" (California, Texas Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,748,337, issued on Sept. 29, was assigned to Hewlett Packard Enterprise Development LP (Spring, Texas).

"Photonic devices having a field-effect transistor (FET)" was invented by Bassem Tossoun (Santa Barbara, Calif.), Geza Kurczveil (Santa Barbara, Calif.), Di Liang (Spring, Texas) and Stanley Cheung (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods are provided for optical devices having a field-effect transistor (FET) for optical tuning. Examples include a device layer formed on a substrate and comprising a first material, and a FET formed on the substrate. The MOSFET comprises a drain formed in the device layer com...