US Patent Issued to Hefei Core Storage Electronic on July 28 for "Memory control method and memory storage device" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,693,933, issued on July 28, was assigned to Hefei Core Storage Electronic Ltd. (Anhui, China).

"Memory control method and memory storage device" was invented by Yuecong Liang (Shandong, China), Yan Zheng (Anhui, China), Kai-Di Zhu (Anhui, China), Zhi Wang (Anhui, China), Tsung-Lin Wu (Hsinchu City, Taiwan) and Qi-Ao Zhu (Anhui, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory control method and a memory storage device, and the method includes: dividing each of the storage groups into a first or second storage group; receiving a first write command from a host system, in which the first write command includes first data and a first address; ...