US Patent Issued to Hefei Core Storage Electronic on Aug. 25 for "Write control method based on write behavior prediction, memory storage device, and memory control circuit unit" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,717,478, issued on Aug. 25, was assigned to Hefei Core Storage Electronic Ltd. (Anhui, China).

"Write control method based on write behavior prediction, memory storage device, and memory control circuit unit" was invented by Chih-Ling Wang (Anhui, China), Fan Yi (Hunan, China), Kuai Cao (Anhui, China), Yang Chen (Anhui, China), Qin Qin Tao (Anhui, China) and Dong Sheng Rao (Anhui, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A write control method based on write behavior prediction, a memory storage device, and a memory control circuit unit are provided. The method includes: monitoring a first data write behavior of a host system during a first ...