US Patent Issued to HEFECHIP on Feb. 17 for "Methods for fabricating MRAM with void free interlayer dielectric" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,554, issued on Feb. 17, was assigned to HEFECHIP CORPORATION LIMITED (Hong Kong).

"Methods for fabricating MRAM with void free interlayer dielectric" was invented by Chih Yuan Lee (Taoyuan, Taiwan), Hong-Hui Hsu (Zhubei, Taiwan), Yiheng Xu (Clifton Park, N.Y.), Laertis Economikos (Wappingers Falls, N.Y.), Chao-Hsu Chang (Ballston Lake, N.Y.) and Wei-Chuan Chen (Scarsdale, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating an MRAM device is disclosed. The method includes: depositing a first dielectric layer and a second dielectric layer over a semiconductor substrate; depositing a bottom electrode layer over the second diele...