US Patent Issued to Headway Technologies on Nov. 3 for "Tunneling magnetoresistance device with magnetically soft high moment free layer" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,770, issued on Nov. 3, was assigned to Headway Technologies Inc. (Milpitas, Calif.).

"Tunneling magnetoresistance device with magnetically soft high moment free layer" was invented by Hui-Chuan Wang (Pleasanton, Calif.), Shohei Kawasaki (Sunnyvale, Calif.), Kunliang Zhang (Fremont, Calif.), Sangmun Oh (San Jose, Calif.) and Zheng Gao (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy...