US Patent Issued to Headway Technologies on Feb. 10 for "Nitride diffusion barrier structure for spintronic applications" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,623, issued on Feb. 10, was assigned to Headway Technologies Inc. (Milpitas, Calif.).

"Nitride diffusion barrier structure for spintronic applications" was invented by Santiago Serrano Guisan (San Jose, Calif.), Luc Thomas (San Jose, Calif.), Jodi Mari Iwata (San Carlos, Calif.), Guenole Jan (San Jose, Calif.) and Vignesh Sundar (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) is disclosed wherein a nitride diffusion barrier (NDB) has a L2/L1/NL or NL/L1/L2 configuration wherein NL is a metal nitride or metal oxynitride layer, L2 blocks oxygen diffusion from an adjoining Hk enhancing layer, and L1 prev...