US Patent Issued to HC Semitek (Zhejiang) on July 7 for "Gallium nitride-based high electron mobility transistor epitaxial wafer with an InGaN/GaN cap layer comprising first sublayers doped with a main doping element and second sublayers doped with the first doping element and an auxiliary doping element, and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,431, issued on July 7, was assigned to HC Semitek (Zhejiang) Co. Ltd. (Zhejiang, China).

"Gallium nitride-based high electron mobility transistor epitaxial wafer with an InGaN/GaN cap layer comprising first sublayers doped with a main doping element and second sublayers doped with the first doping element and an auxiliary doping element, and preparation method therefor" was invented by Chen Su (Jiangsu, China), Jiahui Hu (Jiangsu, China), Hui Wang (Jiangsu, China), Yuanyuan Jiang (Jiangsu, China), Wubin Zhang (Jiangsu, China) and Peng Li (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to the technical fi...