US Patent Issued to HC Semitek (Suzhou) on Sept. 1 for "Light-emitting diode epitaxial wafer, growth method therefor, and light-emitting diode chip" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,284, issued on Sept. 1, was assigned to HC Semitek (Suzhou) Co. Ltd. (Jiangsu, China).

"Light-emitting diode epitaxial wafer, growth method therefor, and light-emitting diode chip" was invented by Zhen Yao (Jiangsu, China), Ying Cong (Jiangsu, China), Binzhong Dong (Jiangsu, China) and Peng Li (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application is directed to a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber; forming GaN crystal nuclei cont...