US Patent Issued to HANWHA SOLUTIONS, HANWHA on May 26 for "Apparatus for continuously growing ingot" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,784, issued on May 26, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).

"Apparatus for continuously growing ingot" was invented by Dong Woo Bae (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea) and Young Min Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for continuously growing an ingot includes a growth furnace in which a main crucible where silicon in a molten state is accommodated is located therein to form an ingot; a material supply part for supplying a silicon material in a solid state before the silicon in a molten state is melted; and a preliminary...