US Patent Issued to HANGZHOU WEIMING XINKE TECHNOLOGY., ADVANCED INSTITUTE OF INFORMATION TECHNOLOGY (AIIT), PEKING UNIVERISTY on Dec. 2 for "Connection structure of thin film electrode and housing" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,911, issued on Dec. 2, was assigned to HANGZHOU WEIMING XINKE TECHNOLOGY. LTD (Zhejiang, China) and ADVANCED INSTITUTE OF INFORMATION TECHNOLOGY (AIIT), PEKING UNIVERISTY (Zhejiang, China).

"Connection structure of thin film electrode and housing" was invented by Qian Yang (Zhejiang, China), Liang Li (Zhejiang, China), Meng Gao (Zhejiang, China) and Le Ye (Zhejiang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A connection structure of a thin film electrode and a housing includes at least one thin film electrode unit and a housing; the electrode unit includes a porous thin film, a first electrode and a second electrode attached to two sides o...