US Patent Issued to Hangzhou Silicon-Magic Semiconductor Technology on Dec. 16 for "Silicon carbide power semiconductor device having reduced specific on-resistance" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,674, issued on Dec. 16, was assigned to Hangzhou Silicon-Magic Semiconductor Technology Co. Ltd. (Hangzhou, China).

"Silicon carbide power semiconductor device having reduced specific on-resistance" was invented by Xiao Yang (Hangzhou, China) and Hui Chen (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide power semiconductor device is provided, including a substrate, a drift region, a body region, a source region, a base region, a shielding region, a JFET region, a gate structure, an insulating layer, and a source metal layer. The source contacting window has first edges within second edges of the body region correspon...