US Patent Issued to Hangzhou HFC Semiconductor on March 31 for "eDRAM and method for making same" (Singaporean, Chinese, American Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,435, issued on March 31, was assigned to Hangzhou HFC Semiconductor Co. (Hangzhou, China).

"eDRAM and method for making same" was invented by Mingyu Hu (Dalian, China), Liang Li (Singapore) and Huang Liu (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An eDRAM and a method for making it are disclosed. In the method, a pad oxide layer and a pad nitride layer formed over a surface of a substrate are removed after an active area and a deep trench filled with polysilicon are formed, followed by the formation of a re-deposited oxide layer and a re-deposited nitride layer. The re-deposited nitride layer has greater uniformity than the...