US Patent Issued to HANGZHOU HFC SEMICONDUCTOR on Jan. 27 for "Method of making soi device from bulk silicon substrate and soi device" (Chinese, Singaporean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,765, issued on Jan. 27, was assigned to HANGZHOU HFC SEMICONDUCTOR Co. (Hangzhou, China).

"Method of making soi device from bulk silicon substrate and soi device" was invented by Youming Liu (Singapore), Hok Min Ho (Hong Kong) and Beichao Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a silicon-on-insulator (SOI) device from a bulk silicon substrate and an SOI device are disclosed. In the method, a stack of a heteroepitaxial layer and a silicon epitaxial layer are formed on a bulk silicon substrate, and a first photolithography process is performed on the stack to form a first trench exposing the bulk silicon subst...